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Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data
INA-01170
Features
* Cascadable 50 Gain Block * Low Noise Figure: 1.7 dB Typical at 100 MHz * High Gain: 32.5 dB Typical at 100 MHz * 3 dB Bandwidth: DC to 500 MHz * Unconditionally Stable (k>1) * Hermetic Gold-Ceramic Surface Mount Package
amplifier housed in a hermetic, high reliability package. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification.
70 mil Package
Description
The INA-01170 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback
The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz f MAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Typical Biasing Configuration
VCC > 8 V RFC (Optional) Rbias (Required) Cblock RF IN 1 2 4 3 Vd = 5.5 V Cblock RF OUT
6-87
5965-9562E
INA-01170 Absolute Maximum Ratings
Parameter Device Current Power Dissipation [2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 400 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 140C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.1 mW/C for TC > 144C. 4. See MEASUREMENTS section "Thermal Resistance" for more information.
INA-01170 Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB ISO VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 35 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Reverse Isolation (|S12| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 10 to 250 MHz f = 10 to 250 MHz f = 10 to 250 MHz f = 100 MHz f = 100 MHz f = 100 MHz f = 100 MHz f = 100 MHz f = 10 to 250 MHz
Units
dB dB MHz dB
Min.
30
Typ.
32.5 0.5 500 39 1.6:1 1.5:1
Max.
35
dB dBm dBm psec V mV/C 4.0
2.0 11 23 200 5.5 +10
2.5
7.0
Notes: 1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP).
INA-01170 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 35 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag S22 Ang Mag Ang k
0.01 0.05 0.10 0.15 0.20 0.25 0.30 0.40 0.50 0.60 0.80 1.0 1.5 2.0 2.5 3.0
.09 .10 .13 .17 .21 .25 .28 .33 .37 .40 .43 .44 .44 .44 .46 .48
-20 -39 -65 -83 -96 -107 -115 -130 -140 -150 -164 -176 165 154 148 139
32.8 32.8 32.6 32.4 32.1 31.8 31.5 30.7 29.9 29.0 27.4 25.8 21.8 17.9 14.6 11.4
43.65 -2 43.51 -9 42.82 -18 41.71 -26 40.41 -35 38.93 -43 37.38 -50 34.19 -65 31.13 -78 28.30 -90 23.48 -112 19.45 -132 12.37 -179 7.88 146 5.36 121 3.71 96 6-88
-38.4 -38.3 -38.3 -38.4 -38.6 -39.0 -39.0 -39.3 -39.2 -38.9 -38.5 -36.5 -33.6 -33.0 -30.6 -30.0
.012 .012 .012 .012 .012 .011 .011 .011 .011 .011 .012 .015 .020 .022 .029 .032
-5 17 -4 17 12 26 3 21 11 22 30 32 42 42 36 45
.17 .18 .18 .19 .19 .19 .20 .21 .22 .23 .24 .23 .19 .13 .12 .10
-1 0 1 2 3 4 5 3 0 -5 -19 -32 -69 -106 -151 159
1.17 1.17 1.17 1.18 1.18 1.26 1.26 1.31 1.35 1.43 1.52 1.49 1.75 2.42 2.63 3.31
INA-01170 Typical Performance, TA = 25C
(unless otherwise noted)
35 3.0 50 TMS = +125C TMS = +25C TMS = -55C Id (mA) 35 0.1 GHz 0.5 GHz 30 1.0 GHz 25
Gain Flat to DC 30 2.5 Id (mA)
40
30
Gp (dB)
25
2.0
NF (dB)
20 20 10
20
1.5
15 .01
.02
.05
0.1
0.2
0.5
1.0 1.0
0 0 2 4 Vd (V) 6 8
15 .01
.05 Id (mA)
0.2
1.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25C, Id = 35 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
33 Gp (mA) 32 31 P1 dB P1 dB (dBm) P1 dB (dBm) 30 13 11 2.5 NF (dB) 2.0 1.5 1.0 0.5 -55 -25 +25 +85 +125 NF 9 7 Gp
15 Id = 40 mA 12
3.0
2.5 Id = 35 mA Id = 30 mA 6 1.5 3 NF (dB) 9 2.0 Id = 30 to 40 mA
0 .02
.05
0.1
0.2
0.5
1.0
1.0 .02
.05
0.1
0.2
0.5
1.0
TEMPERATURE (C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 0.1 GHz, Id = 35 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
70 mil Package Dimensions
.040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3
2
GROUND
.004 .002 .10 .05
.070 1.70
Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13
.495 .030 12.57 .76
.035 .89
6-89

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